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| geometry process details principal device types 2n4403 2n5366 gross die per 4 inch wafer 30,475 process cp593 small signal transistor pnp - amp/switch transistor chip process epitaxial planar die size 19 x 19 mils die thickness 9.0 mils base bonding pad area 3.5 x 4.3 mils emitter bonding pad area 3.5 x 4.5 mils top side metalization al - 30,000? back side metalization au - 18,000? www.centralsemi.com r2 (22-march 2010)
process cp593 typical electrical characteristics www.centralsemi.com r2 (22-march 2010) |
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